The rapid development of digital technologies, artificial intelligence and Internet of Things applications are increasing the demand for efficient data processing, transmission and storage. Since conventional von Neumann architectures are limited by energy consumption, latency and scalability, alternative device concepts and computing paradigms are being actively investigated. Memristive devices are promising candidates in this context. These two-terminal metal-insulator-metal structures can reversibly change and retain their resistance state under an electrical stimuli. Besides memory and neuromorphic applications, they are attractive as programmable resistive elements for analogue and radio-frequency circuits, where low resistance, quasi-ohmic behaviour, stability and controllable switching are required. This thesis focuses on Filamentary Conductivity Change Mechanism devices, a class of redox-based memristive devices based on the formation and polarity-dependent modification of a conductive filament through a thin switching layer.