Ultimo aggiornamento:  2024/05/29

*** Silicon, silicon oxide, germanium, and SiGe: band structure and
    fundamental physical properties [see also MATERIA.BIB]

@ARTICLE{1960Anderson_IBM,
DOI={10.1147/rd.43.0283},
AUTHOR="R. L. Anderson",
TITLE="Germanium-Gallium Arsenide Heterojunctions",
JOURNAL=IBM,
VOLUME=4,
NUMBER=3,
PAGES={283--287},
MONTH=JUL,
YEAR=1960}

@ARTICLE{1972Walter_PRB,
AUTHOR="J. P. Walter and M. L. Cohen",
TITLE="Frequency- and Wave-Vector-Dependent Dielectric Function for Silicon",
JOURNAL=PRB,
VOLUME=5,
NUMBER=8,
PAGES={3101--3110},
MONTH=APR,
YEAR=1972}

@ARTICLE{Va-Co,
AUTHOR="Varea de Alvarez, C. and M. L. Cohen",
TITLE="Pressure Coefficients for Band Gaps in Silicon",
JOURNAL=SSC,
VOLUME=14,
NUMBER=4,
PAGES={317--320},
YEAR=1974}

@ARTICLE{77Weber_PRB,
AUTHOR="W. Weber",
TITLE="Adiabatic bond charge model for the phonons in diamond, {Si}, {Ge}, and a-{Sn}",
JOURNAL=PRB,
VOLUME=15,
NUMBER=10,
PAGES={4789--4803},
MONTH=MAY,
YEAR=1977}

@ARTICLE{79Nielsen_CPC,
AUTHOR="O. H. Nielsen and W. Weber",
TITLE="Lattice dynamics of group {IV} semiconductors using an adiabatic bond charge model",
JOURNAL=CPC,
VOLUME=18,
NUMBER=1,
PAGES={101--108},
YEAR=1979}

@ARTICLE{81Allen_PRB,
AUTHOR="P. B. Allen and M. Cardona",
TITLE="Theory of the temperature dependence of the direct gap of germanium",
JOURNAL=PRB,
VOLUME=23,
NUMBER=4,
PAGES={1495--1505},
MONTH=FEB,
YEAR=1981}

@ARTICLE{83Allen_PRB,
AUTHOR="P. B. Allen and M. Cardona",
TITLE="Temperature dependence of the direct gap of {Si} and {Ge}",
JOURNAL=PRB,
VOLUME=27,
NUMBER=8,
PAGES={4760--4769},
MONTH=APR,
YEAR=1983}

@ARTICLE{86Lautenschlager_PRB,
AUTHOR="P. Lautenschlager and P. B. Allen and M. Cardona",
TITLE="Phonon-induced lifetime broadenings of electronic states and
critical points in {Si} and {Ge}",
JOURNAL=PRB,
VOLUME=33,
NUMBER=8,
PAGES={5501--5511},
MONTH=APR,
YEAR=1986}

@ARTICLE{87Lautenschlager_PRB,
AUTHOR="P. Lautenschlager and M. Garriga and L. Vi{\~n}a and M.
Cardona",
TITLE="Temperature dependence of the dielectric function and interband
critical points in silicon",
JOURNAL=PRB,
VOLUME=36,
NUMBER=9,
PAGES={4821--4830},
MONTH=SEP,
YEAR=1987}

@ARTICLE{88Adachi_PRBb,
AUTHOR="S. Adachi",
TITLE="Model dielectric constants of {Si} and {Ge}",
JOURNAL=PRB,
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MONTH=DEC,
YEAR=1988}

@ARTICLE{Fr-Hy-Sc,
AUTHOR="P. Friedel and M. S. Hybertsen and M. Schl{\"u}ter",
TITLE="Local empirical pseudopotential approach to the properties of {Si/Ge} superlattices",
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NUMBER=11,
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MONTH=APR,
YEAR=1989}

@ARTICLE{1993Rieger_PRB,
AUTHOR="M. M. Rieger and P. Vogl",
TITLE="Electronic-band parameters in strained {Si$_{1-x}$Ge$_{x}$} alloys on {Si$_{1-y}$Ge$_{y}$} substrates",
JOURNAL=PRB,
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NUMBER=19,
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MONTH=NOV,
YEAR=1993}

@ARTICLE{98Benedict_PRB,
AUTHOR="L. X. Benedict and E. L. Shirley and R. B. Bohn",
TITLE="Theory of optical absorption in diamond, {Si}, {Ge}, and {GaAs}",
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MONTH=APR,
YEAR=1998}

@ARTICLE{98Albrecht_PRL,
AUTHOR="S. Albrecht and L. Reining and Del Sole, R. and G. Onida",
TITLE="\emph{{A}b Initio} Calculation of Excitonic Effects in the
Optical Spectra of Semiconductors",
JOURNAL=PRL,
VOLUME=80,
NUMBER=20,
PAGES={4510--4513},
MONTH=MAY,
YEAR=1998}

@ARTICLE{Pe-Ja,
AUTHOR="C. Persson and E. Janz{\'e}n",
TITLE="Electronic band structure in hexagonal close-packed {Si} polytypes",
JOURNAL=JPCM,
VOLUME=10,
PAGES={10549--10555},
YEAR=1998}

@ARTICLE{99Albrecht_PRL,
AUTHOR="S. Albrecht and L. Reining and G. Onida and V. Olevano and Del Sole, R.",
TITLE="Reply to a comment on ``\emph{{A}b Initio} Calculation of Excitonic Effects in the Optical Spectra of Semiconductors''",
JOURNAL=PRL,
VOLUME=83,
NUMBER=19,
PAGES=3971,
MONTH=NOV,
YEAR=1999}

@ARTICLE{99Cardona_PRL,
AUTHOR="M. Cardona and L. F. Lastras-Martinez and D. E. Aspnes",
TITLE="Comment on ``\emph{{A}b Initio} Calculation of Excitonic Effects in the Optical Spectra of Semiconductors''",
JOURNAL=PRL,
VOLUME=83,
NUMBER=19,
PAGES=3970,
MONTH=NOV,
YEAR=1999}

@ARTICLE{99Theodorou_PSSBa,
AUTHOR="G. Theodorou and G. Tsegas",
TITLE="Piezooptical properties of {Si}",
JOURNAL=PSSB,
VOLUME=207,
PAGES={541--556},
YEAR=1999}

@ARTICLE{00Bernstein_PRB,
AUTHOR="N. Bernstein and M. J. Mehl and D. A. Papaconstantopoulos and N.
I. Papanicolaou and M. Z. Bazant and E. Kaxiras",
TITLE="Energetic, vibrational, and electronic properties of silicon
using a nonorthogonal tight-binding model",
JOURNAL=PRB,
VOLUME=62,
NUMBER=7,
PAGES={4477--4487},
MONTH=AUG,
YEAR=2000}

@ARTICLE{00Kootstra_PRB,
AUTHOR="F. Kootstra and de Boeij, P. L. and J. G. Snijders",
TITLE="Application of time-dependent density-functional theory to the dielectric function of various nonmetallic crystals",
JOURNAL=PRB,
VOLUME=62,
NUMBER=11,
PAGES={7071--7083},
MONTH=SEP,
YEAR=2000}

@ARTICLE{00Gnani_TED,
AUTHOR="E. Gnani and S. Reggiani and R. Colle and M. Rudan",
TITLE="Band-Structure Calculations of {SiO$_2$} by Means of {H}artree-{F}ock and Density-Functional Techniques",
JOURNAL=TED,
VOLUME=47,
NUMBER=10,
PAGES={1795--1803},
MONTH=OCT,
YEAR=2000}

@ARTICLE{2016Dominici_APL,
DOI={10.1063/1.4952720},
AUTHOR="Stefano Dominici and Hanqing Wen and Francesco Bertazzi and Michele Goano and Enrico Bellotti",
TITLE="Numerical evaluation of {A}uger recombination coefficients in relaxed and strained germanium",
JOURNAL=APL,
VOLUME=108,
NUMBER=21,
NUMPAGES=4,
PAGES=211103,
MONTH=MAY,
YEAR=2016}

@ARTICLE{2016Dominici_OEX,
DOI={10.1364/OE.24.026363},
AUTHOR="Stefano Dominici and Hanqing Wen and Francesco Bertazzi and Michele Goano and Enrico Bellotti",
TITLE="Numerical study of radiative and {A}uger recombination processes in {GeSn} alloy for {E-SWIR} and {MWIR} optoelectronic applications",
JOURNAL=OEX,
VOLUME=24,
NUMBER=23,
NUMPAGES=19,
PAGES={26363--26381},
MONTH=NOV,
YEAR=2016}


*** Silicon, silicon oxide, germanium, and SiGe: transport properties

@ARTICLE{1967Kane_PR,
AUTHOR="E. O. Kane",
TITLE="Electron Scattering by Pair Production in Silicon",
JOURNAL=PR,
VOLUME=159,
NUMBER=3,
PAGES={624--631},
MONTH=JUL,
YEAR=1967}

@ARTICLE{75Canali_PRB,
AUTHOR="C. Canali and C. Jacoboni and F. Nava and G. Ottaviani and A.
Alberigi-Quaranta",
TITLE="Electron drift velocity in silicon",
JOURNAL=PRB,
VOLUME=12,
NUMBER=4,
PAGES={2265--2284},
MONTH=AUG,
YEAR=1975}

@ARTICLE{Gh-Pe-Ja,
AUTHOR="L. Gherardi and A. Pellacani and C. Jacoboni",
TITLE="Velocity Autocorrelation Function and Low-Temperature Mobility of
Electrons in Silicon",
JOURNAL=LNC,
VOLUME=14,
NUMBER=7,
PAGES={225--232},
MONTH=OCT,
YEAR=1975}

@ARTICLE{75Ottaviani_PRB,
AUTHOR="G. Ottaviani and L. Reggiani and C. Canali and F. Nava and A.
Alberigi-Quaranta",
TITLE="Hole drift velocity in silicon",
JOURNAL=PRB,
VOLUME=12,
NUMBER=8,
PAGES={3318--3329},
MONTH=OCT,
YEAR=1975}

@ARTICLE{81Meyer_PRB.2,
AUTHOR="J. R. Meyer and F. J. Bartoli",
TITLE="Phase-shift calculation of electron mobility in
\emph{n}-type silicon at low temperatures",
JOURNAL=PRB,
VOLUME=24,
NUMBER=4,
PAGES={2089--2100},
MONTH=AUG,
YEAR=1981}

@ARTICLE{81Reggiani_JP,
AUTHOR="L. Reggiani and J. C. Vaissi{\`e}re and J. P. Nougier and D.
Gasquet",
TITLE="Transient regimes of hot carriers in \emph{p}-type silicon",
JOURNAL=JP,
VOLUME=42,
NUMBER={10. Colloque C7},
PAGES={357--367},
MONTH=OCT,
YEAR=1981}

@ARTICLE{82Arora_TED,
AUTHOR="N. D. Arora and J. R. Hauser and D. J. Roulston",
TITLE="Electron and Hole Mobilities in Silicon as a Function of
Concentration and Temperature",
JOURNAL=TED,
VOLUME=29,
NUMBER=2,
PAGES={292--295},
MONTH=FEB,
YEAR=1982}

@ARTICLE{82Glembocki_PRB,
AUTHOR="O. J. Glembocki and F. H. Pollak",
TITLE="Calculation of the ${\Gamma}-{L}$ Electron-Phonon
and Hole-Phonon Scattering Matrix Elements in Germanium",
JOURNAL=PRB,
VOLUME=25,
NUMBER=12,
PAGES={7863--7866},
MONTH=JUN,
YEAR=1982}

@ARTICLE{82Bednarek_PRL,
AUTHOR="S. Bednarek and U. Rossler",
TITLE="Calculation of the ${\Gamma}-{\Delta}$ Electron-Phonon and
Hole-Phonon Matrix Elements in Silicon",
JOURNAL=PRL,
VOLUME=48,
NUMBER=18,
PAGES={1296},
MONTH=MAY,
YEAR=1982}

@ARTICLE{82Glembocki_PRL,
AUTHOR="O. J. Glembocki and F. H. Pollak",
TITLE="Calculation of the ${\Gamma}-{\Delta}$ Electron-Phonon
and Hole-Phonon Scattering Matrix Elements in Silicon",
JOURNAL=PRL,
VOLUME=48,
NUMBER=6,
PAGES={413--416},
MONTH=FEB,
YEAR=1982}

@ARTICLE{Ta-He-1,
AUTHOR="J. Y. Tang and K. Hess",
TITLE="Impact ionization of electrons in silicon (steady state)",
JOURNAL=JAP,
VOLUME=54,
NUMBER=9,
PAGES={5139--5144},
MONTH=SEP,
YEAR=1983}

@ARTICLE{Ta-He-2,
AUTHOR="J. Y. Tang and K. Hess",
TITLE="Theory of hot electron emission from silicon into silicon dioxide",
JOURNAL=JAP,
VOLUME=54,
NUMBER=9,
PAGES={5145--5151},
MONTH=SEP,
YEAR=1983}

@ARTICLE{Lu-Fe-3,
AUTHOR="P. Lugli and D. K. Ferry",
TITLE="Electron-electron interaction and high field transport in {Si}",
JOURNAL=APL,
VOLUME=46,
NUMBER=6,
PAGES={594--596},
MONTH=MAR,
YEAR=1985}

@ARTICLE{Fi-Di-Br-Th,
AUTHOR="M. V. Fischetti and D. J. DiMaria and S. D. Brorson and T. N. Theis and J. R. Kirtley",
TITLE="Theory of high-field electron transport in silicon dioxide",
JOURNAL=PRB,
VOLUME=31,
NUMBER=12,
PAGES={8124--8142},
MONTH=JUN,
YEAR=1985}

@ARTICLE{Wa-Ma,
AUTHOR="Van de Walle, C. G. and R. M. Martin",
TITLE="Theoretical calculations of heterojunction discontinuities in the {Si/Ge} system",
JOURNAL=PRB,
VOLUME=34,
NUMBER=8,
PAGES={5621--5634},
MONTH=OCT,
YEAR=1986}

@ARTICLE{Hi-Si,
AUTHOR="J. M. Hinckley and J. Singh",
TITLE="Hole transport theory in pseudomorphic {Si$_{1-x}$Ge$_{x}$} alloys grown on {Si(001)} substrates",
JOURNAL=PRB,
VOLUME=41,
NUMBER=5,
PAGES={2912--2926},
MONTH=FEB,
YEAR=1990}

@ARTICLE{1990Sano_PRB,
AUTHOR="N. Sano and T. Aoki and M. Tomizawa and A. Yoshii",
TITLE="Electron transport and impact ionization in {Si}",
JOURNAL=PRB,
VOLUME=41,
NUMBER=17,
PAGES={12122--12128},
MONTH=JUN,
YEAR=1990}

@ARTICLE{1990Pan_JAP,
AUTHOR="Y. Pan",
TITLE="{M}onte {C}arlo studies of band-tail effects on the recombination kinetics in heavily doped silicon",
JOURNAL=JAP,
VOLUME=67,
NUMBER=12,
PAGES={7393--7398},
MONTH=JUN,
YEAR=1990}

@ARTICLE{1991Fischetti_PRB,
AUTHOR="M. V. Fischetti",
TITLE="Effect of the electron-plasmon interaction on the electron mobility in silicon",
JOURNAL=PRB,
VOLUME=44,
NUMBER=11,
PAGES={5527--5534},
MONTH=SEP,
YEAR=1991}

@ARTICLE{1992Sano_PRB,
AUTHOR="N. Sano and A. Yoshii",
TITLE="Impact-ionization theory consistent with a realistic band structure of silicon",
JOURNAL=PRB,
VOLUME=45,
NUMBER=8,
PAGES={4171--4180},
MONTH=FEB,
YEAR=1992}

@ARTICLE{1992Thoma_SST,
AUTHOR="R. Thoma and K. P. Westerholz and H. J. Peifer and W. L. Engl",
TITLE="On the validity of the relaxation time approximation for silicon in the region of irreversible thermodynamics",
JOURNAL=SST,
VOLUME=7,
PAGES={B328--B330},
YEAR=1992}

@ARTICLE{1992Yoder_SST,
AUTHOR="P. D. Yoder and J. M. Higman and J. Bude and K. Hess",
TITLE="{M}onte {C}arlo simulation of hot electron transport in {Si} using a unified pseudopotential description of the crystal",
JOURNAL=SST,
VOLUME=7,
PAGES={B357--B359},
YEAR=1992}

@ARTICLE{1993Cartier_APL,
AUTHOR="E. Cartier and M. V. Fischetti and E. A. Eklund and F. R. McFeely",
TITLE="Impact ionization in silicon",
JOURNAL=APL,
VOLUME=62,
NUMBER=25,
PAGES={3339--3341},
MONTH=JUN,
YEAR=1993}

@ARTICLE{1993Fischetti_PRB,
AUTHOR="M. V. Fischetti and S. E. Laux",
TITLE="{M}onte {C}arlo study of electron transport in silicon inversion layers",
JOURNAL=PRB,
VOLUME=48,
NUMBER=4,
PAGES={2244--2274},
MONTH=JUL,
YEAR=1993}

@ARTICLE{1993Mizuno_PRB,
AUTHOR="H. Mizuno and K. Taniguchi and C. Hamaguchi",
TITLE="Electron-transport simulation in silicon including anisotropic phonon scattering rate",
JOURNAL=PRB,
VOLUME=48,
NUMBER=3,
PAGES={1512--1516},
MONTH=JUL,
YEAR=1993}

@ARTICLE{1993Yoder_JAP,
AUTHOR="P. D. Yoder and V. D. Natoli and R. M. Martin",
TITLE="\emph{Ab initio} analysis of the electron-phonon interaction in silicon",
JOURNAL=JAP,
VOLUME=73,
NUMBER=9,
PAGES={4378--4383},
MONTH=MAY,
YEAR=1993}

@ARTICLE{1994Kunikiyo_JAP,
AUTHOR="T. Kunikiyo and M. Takenaka and Y. Kamakura and M. Yamaji and H. Mizuno and M. Morifuji and K. Taniguchi and C. Hamaguchi",
TITLE="A {M}onte {C}arlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model",
JOURNAL=JAP,
VOLUME=75,
NUMBER=1,
PAGES={297--312},
MONTH=JAN,
YEAR=1994}

@ARTICLE{1994Sano_JAP,
AUTHOR="N. Sano and A. Yoshii",
TITLE="Impact ionization rate near thresholds in {Si}",
JOURNAL=JAP,
VOLUME=75,
NUMBER=10,
PAGES={5102--5105},
MONTH=MAY,
YEAR=1994}

@ARTICLE{1994Abramo_TED,
AUTHOR="A. Abramo and L. Baudry and R. Brunetti and R. Castagne and M. Charef and F. Dessenne and P. Dollfus and R. Dutton and W. L. Engl and R. Fauquembergue and C. Fiegna and M. V. Fischetti and S. Galdin and N. Goldsman and M. Hackel and C. Hamaguchi and K. Hess and K. Hennacy and P. Hesto and J. M. Higman and T. Iizuka and C. Jungemann and Y. Kamakura and H. Kosina and T. Kunikiyo and S. E. Laux and H. Lin and C. Maziar and H. Mizuno and H. J. Peifer and S. Ramaswamy and N. Sano and P. G. Scrobohaci and S. Selberherr and M. Takenaka and T. Tang anf K. Taniguchi and J. L. Thobel and R. Thoma and K. Tomizawa and M. Tomizawa and T. Vogelsang and S.-L. Wang and X. Wang and C.-S. Yao and P. D. Yoder and A. Yoshii",
TITLE="A Comparison of Numerical Solutions of the {B}oltzmann Transport Equation for High-Energy Transport Silicon",
JOURNAL=TED,
VOLUME={ED-41},
NUMBER=9,
PAGES={1646--1654},
MONTH=SEP,
YEAR=1994}

@ARTICLE{1994Goldman_SST,
AUTHOR="J. R. Goldman and J. A. Prybyla",
TITLE="Ultrafast hot-electron dynamics in silicon",
JOURNAL=SST,
VOLUME=9,
PAGES={694--696},
YEAR=1994}

@ARTICLE{1995Fischetti_JAP,
AUTHOR="M. V. Fischetti and S. E. Laux and E. Crabb{\'e}",
TITLE="Understanding hot-electron transport in silicon devices: {I}s there a shortcut?",
JOURNAL=JAP,
VOLUME=78,
NUMBER=2,
PAGES={1058--1087},
MONTH=JUL,
YEAR=1995}

@ARTICLE{1996Kunikiyo_JAP,
AUTHOR="T. Kunikiyo and M. Takenaka and M. Morifuji and K. Taniguchi and C. Hamaguchi",
TITLE="A model of impact ionization due to the primary hole in silicon for a full band {M}onte {C}arlo simulation",
JOURNAL=JAP,
VOLUME=79,
NUMBER=10,
PAGES={7718--7725},
MONTH=MAY,
YEAR=1996}

@ARTICLE{1996Fischetti_JAP,
AUTHOR="M. V. Fischetti and S. E. Laux",
TITLE="Band structure, deformation potentials, and carrier mobility in strained {Si}, {Ge}, and {SiGe} alloys",
JOURNAL=JAP,
VOLUME=80,
NUMBER=4,
PAGES={2234--2252},
MONTH=AUG,
YEAR=1996}

@ARTICLE{1996Fischetti_JTAD,
DOI={10.1109/TCAD.1996.6449160},
AUTHOR="M. V. Fischetti and N. Sano and S. E. Laux and K. Natori",
TITLE="Full-Band-Structure Theory of High-Field Transport and Impact Ionization of Electrons and Holes in {Ge}, {Si}, and {GaAs}",
JOURNAL=JTAD,
YEAR=1996}

@ARTICLE{1997Schaeffler_SST,
AUTHOR="F. Sc{\"a}ffler",
TITLE="High mobility {Si} and {Ge} structures",
JOURNAL=SST,
VOLUME=12,
PAGES={1515--1549},
YEAR=1997}

@ARTICLE{1998Kaiblinger-Grujin_JAP,
AUTHOR="G. Kaiblinger-Grujin and H. Kosina and S. Selberherr",
TITLE="Influence of the doping element on the electron mobility in \emph{n}-silicon",
JOURNAL=JAP,
VOLUME=83,
NUMBER=6,
PAGES={3096--3101},
MONTH=MAR,
YEAR=1998}

@ARTICLE{1998Kosina_SSE,
AUTHOR="H. Kosina and G. Kaiblinger-Grujin",
TITLE="Ionized-Impurity Scattering of Majority Electrons in Silicon",
JOURNAL=SSE,
VOLUME=42,
NUMBER=3,
PAGES={331--338},
YEAR=1998}

@ARTICLE{1998Briggs_SST.1,
AUTHOR="P. J. Briggs and A. B. Walker and D. C. Herbert",
TITLE="Calculation of hole mobilities in relaxed and strained {SiGe} by {M}onte {C}arlo simulation",
JOURNAL=SST,
VOLUME=13,
PAGES={680--691},
YEAR=1998}

@ARTICLE{1998Briggs_SST.2,
AUTHOR="P. J. Briggs and A. B. Walker and D. C. Herbert",
TITLE="Modelling of hole mobilities in heavily doped strained {SiGe}",
JOURNAL=SST,
VOLUME=13,
PAGES={692--699},
YEAR=1998}

@ARTICLE{1999Fischetti_JAP,
AUTHOR="M. V. Fischetti and S. E. Laux",
TITLE="Comment on ``{I}nfluence of the doping element on the electron mobility in \emph{n} silicon'' [{J}. {A}ppl. {P}hys. 83, 3096 (1998)]",
JOURNAL=JAP,
VOLUME=85,
NUMBER=11,
PAGES={7984--7985},
MONTH=JUN,
YEAR=1999}

@ARTICLE{Fi-Ho,
AUTHOR="B. Fischer and K. R. Hofmann",
TITLE="A full-band {M}onte {C}arlo model for the temperature dependence of electron and hole transport in silicon",
JOURNAL=APL,
VOLUME=76,
NUMBER=5,
PAGES={583--585},
MONTH=JAN,
YEAR=2000}

@ARTICLE{2000Hlou_JAP,
AUTHOR="L. Hlou and K. Amechnoue and J. Diyadi and J. C. Vaissiere and L. Varani and A. Moatadid",
TITLE="Correlation functions from multiple solution of the transient {B}oltzmann equation in semiconductors: {A}pplication to noise temperature of holes in silicon",
JOURNAL=JAP,
VOLUME=88,
NUMBER=2,
PAGES={838--841},
MONTH=JUL,
YEAR=2000}

@ARTICLE{2001Fischetti_JAP.1,
AUTHOR="M. V. Fischetti and S. E. Laux",
TITLE="Long-range {C}oulomb interactions in small {Si} devices. {P}art {I}: {P}erformance and reliability",
JOURNAL=JAP,
VOLUME=89,
NUMBER=2,
PAGES={1205--1231},
MONTH=JAN,
YEAR=2001}

@ARTICLE{2001Fischetti_JAP.2,
AUTHOR="M. V. Fischetti",
TITLE="Long-range {C}oulomb interactions in small {Si} devices. {P}art {II}. {E}ffective electron mobility in thin-oxide structures",
JOURNAL=JAP,
VOLUME=89,
NUMBER=2,
PAGES={1232--1250},
MONTH=JAN,
YEAR=2001}


*** Silicon, silicon oxide, germanium, and SiGe: electronic devices

@ARTICLE{1975Nishizawa_TED,
AUTHOR="J. Nishizawa and T. Terasaky and J. Shibata",
TITLE="Field Effect Transistor versus Analog Transistor (Static Induction Transistor)",
JOURNAL=TED,
VOLUME=22,
NUMBER=4,
PAGES={185--197},
MONTH=APR,
YEAR=1975}

@ARTICLE{1983Vojak_TED,
AUTHOR="B. A. Vojak and G. D. Alley",
TITLE="A Comparison of Etched-Geometry and Overgrown Silicon Permeable Base Transistors by Two-Dimensional Numerical Simulations",
JOURNAL=TED,
VOLUME=30,
NUMBER=8,
PAGES={877--882},
MONTH=AUG,
YEAR=1983}

@ARTICLE{1984Baccarani_TED,
AUTHOR="G. Baccarani and M. R. Wordeman and R. H. Dennard",
TITLE="Generalized Scaling Theory and Its Application to a {1/4} Micrometer {MOSFET} Design",
JOURNAL=TED,
VOLUME=31,
NUMBER=4,
PAGES={452--462},
MONTH=APR,
YEAR=1984}

@ARTICLE{1988Tomizawa_TCAD,
AUTHOR="M. Tomizawa and K. Yokoyama and A. Yoshii",
TITLE="Nonstationary Carrier Dynamics in Quarter-Micron {Si} {MOSFET}'s",
JOURNAL=TCAD,
VOLUME=7,
NUMBER=2,
PAGES={254--258},
MONTH=FEB,
YEAR=1988}

@ARTICLE{1990Rathman_TED,
AUTHOR="D. D. Rathman",
TITLE="Optimization of the Doping Profile in {Si} Permeable Base Transistors for High-Frequency, High-Voltage Operation",
JOURNAL=TED,
VOLUME=37,
NUMBER=9,
PAGES={2090--2098},
MONTH=SEP,
YEAR=1990}

@ARTICLE{1998Nilsson_SSE,
AUTHOR="H.-E. Nilsson and T. Andersson and U. Sannemo and C. S. Petersson",
TITLE="An Investigation of the Blocking Characteristics of the Permeable Base Transistor",
JOURNAL=SSE,
VOLUME=42,
NUMBER=3,
PAGES={297--305},
YEAR=1998}

@ARTICLE{2000Nishizawa_TED,
AUTHOR="J. Nishizawa and K. Motoya and A. Itoh",
TITLE="The 2.45\,{GHz} 36\,{W} CW {Si} Recessed Gate Type {SIT} with High Gain and High Voltage Operation",
JOURNAL=TED,
VOLUME=47,
NUMBER=2,
PAGES={482--487},
MONTH=FEB,
YEAR=2000}

@ARTICLE{2000Yeo_EDL.1,
AUTHOR="Y. C. Yeo and V. Subramanian and J. Kedzierski and P. Xuan and T.-J. King and J. Bokor and C. Hu",
TITLE="Nanoscale Ultra-Thin-Body Silicon-on-Insulator {P-MOSFET} with a {SiGe/Si} Heterostructure Channel",
JOURNAL=EDL,
VOLUME=21,
NUMBER=4,
PAGES={161--163},
MONTH=APR,
YEAR=2000}

@ARTICLE{2000Yeo_EDL.2,
AUTHOR="Y. C. Yeo and Q. Lu and W. C. Lee and T.-J. King and C. Hu and X. Wang and X. Guo and T. P. Ma",
TITLE="Direct Tunneling Gate Leakage Current in Transistors with Ultrathin Silicon Nitride Gate Dielectric",
JOURNAL=EDL,
VOLUME=21,
NUMBER=11,
PAGES={540--542},
MONTH=NOV,
YEAR=2000}

@ARTICLE{2000Crow_SST,
AUTHOR="G. C. Crow and R. A. Abram and A. Yangthaisong",
TITLE="{M}onte {C}arlo simulations of {SiGe} \emph{n}-{MODFET}s with high tensile strained {Si} channels",
JOURNAL=SST,
VOLUME=15,
PAGES={770--775},
YEAR=2000}

@ARTICLE{2010Hellings_TED,
DOI={10.1109/TED.2010.2060726},
AUTHOR="Geert Hellings and Geert Eneman and Raymond Krom and De Jaeger, Brice and J\'{e}r\^{o}me Mitard and De Keersgieter, An and Thomas Hoffmann and Marc Meuris and De Meyer, Kristin",
TITLE="Electrical {TCAD} simulations of a germanium p{MOSFET} technology",
JOURNAL=TED,
VOLUME=57,
NUMBER=10,
PAGES={2539--2546},
MONTH=OCT,
YEAR=2010}


*** Silicon, silicon oxide, germanium, and SiGe: piezoresistance and sensors

@ARTICLE{1954Smith_PR,
AUTHOR="C. S. Smith",
TITLE="Piezoresistance Effect in Germanium and Silicon",
JOURNAL=PR,
VOLUME=94,
NUMBER=1,
PAGES={42--49},
MONTH=APR,
YEAR=1954}

@ARTICLE{1956Herring_PR,
AUTHOR="C. Herring and E. Vogt",
TITLE="Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering",
JOURNAL=PR,
VOLUME=101,
NUMBER=3,
PAGES={944--961},
MONTH=FEB,
YEAR=1956}

@ARTICLE{1956Harrison_PR,
AUTHOR="W. A. Harrison",
TITLE="Scattering of Electrons by Lattice Vibrations in Nonpolar Crystals",
JOURNAL=PR,
VOLUME=104,
NUMBER=5,
PAGES={1281--1290},
MONTH=DEC,
YEAR=1956}

@ARTICLE{1960Long_PR,
AUTHOR="D. Long",
TITLE="Scattering of Conduction Electrons by Lattice Vibrations in Silicon",
JOURNAL=PR,
VOLUME=120,
NUMBER=6,
PAGES={2024--2032},
MONTH=DEC,
YEAR=1960}

@ARTICLE{1964Tufte_PR,
AUTHOR="O. N. Tufte and E. L. Stelzer",
TITLE="Piezoresistive Properties of Heavily Doped \emph{n}-Type Silicon",
JOURNAL=PR,
VOLUME=133,
NUMBER={6A},
PAGES={A1705--A1716},
MONTH=MAR,
YEAR=1964}

@ARTICLE{2002Toriyama_JMEMS.1,
AUTHOR="T. Toriyama and S. Sugiyama",
TITLE="Analysis of Piezoresistance in {p}-Type Silicon for Mechanical Sensors",
JOURNAL=JMEMS,
VOLUME=11,
NUMBER=5,
PAGES={598--604},
MONTH=OCT,
YEAR=2002}

@ARTICLE{2002Toriyama_JMEMS.2,
AUTHOR="T. Toriyama and Y. Tanimoto and S. Sugiyama",
TITLE="Single Crystal Silicon Nano-Wire Piezoresistors for Mechanical Sensors",
JOURNAL=JMEMS,
VOLUME=11,
NUMBER=5,
PAGES={605--611},
MONTH=OCT,
YEAR=2002}


*** Silicon, silicon oxide, germanium, and SiGe: photodetectors

@ARTICLE{2018Palmieri_OQE,
DOI={10.1007/s11082-018-1338-y},
AUTHOR="Andrea Palmieri and Marco Vallone and Marco Calciati and Alberto Tibaldi and Francesco Bertazzi and Giovanni Ghione and Michele Goano",
TITLE="Heterostructure modeling considerations for {Ge}-on-{Si} waveguide photodetectors",
JOURNAL=OQE,
VOLUME=50,
NUMBER=2,
NUMPAGES=10,
PAGES=71,
MONTH=FEB,
YEAR=2018}

@MISC{2023Alasio_OpticaOpen.v2,
DOI={10.1364/opticaopen.23736180.v2},
URL={https://preprints.opticaopen.org/articles/preprint/Towards_200_Gbit_s_low-bias-operation_vertical_Ge-on-Si_waveguide_photodetectors/23736180},
AUTHOR="Alasio, Matteo G. C. and Marco Vallone and Alberto Tibaldi and Soha Namnabat and Donald Adams and Prakash Gothoskar and Fabrizio Forghieri and Gianlorenzo Masini and Francesco Bertazzi and Giovanni Ghione and Mariangela Gioannini and Michele Goano",
TITLE="{TCAD}-assisted progress on the {CISCO} platform towards low-bias 200\,{Gbit/s} vertical-pin {Ge}-on-{Si} waveguide photodetectors",
MONTH=OCT,
YEAR=2023}

@MISC{2023Alasio_OpticaOpen.v3,
DOI={10.1364/opticaopen.23736180.v3},
AUTHOR="Alasio, Matteo G. C. and Marco Vallone and Alberto Tibaldi and Soha Namnabat and Donald Adams and Prakash Gothoskar and Fabrizio Forghieri and Gianlorenzo Masini and Francesco Bertazzi and Giovanni Ghione and Mariangela Gioannini and Michele Goano",
TITLE="{TCAD}-assisted progress on the {CISCO} platform towards low-bias 200\,{Gbit/s} vertical-\textit{pin} {Ge}-on-{Si} waveguide photodetectors",
NUMPAGES=8,
MONTH=DEC,
YEAR=2023}

@ARTICLE{2024Alasio_JLT,
DOI={10.1109/JLT.2024.3352437},
AUTHOR="Alasio, Matteo G. C. and Marco Vallone and Alberto Tibaldi and Soha Namnabat and Donald Adams and Prakash Gothoskar and Fabrizio Forghieri and Gianlorenzo Masini and Francesco Bertazzi and Giovanni Ghione and Mariangela Gioannini and Michele Goano",
TITLE="{TCAD}-assisted progress on the {C}isco platform towards low-bias 200\,{Gbit/s} vertical-\textit{pin} {Ge}-on-{Si} waveguide photodetectors",
JOURNAL=JLT,
VOLUME=42,
NUMBER=9,
PAGES={3269--3276},
MONTH=MAY,
YEAR=2024}

@ARTICLE{2024LiuD_PJ,
DOI={10.1109/JPHOT.2024.3393366},
AUTHOR="David Liu and Luca F. Errico and Alasio, Matteo G. C. and Mike Zhu and Enrico Bellotti",
TITLE="Modeling the impact of fabrication variabilities on the performance of silicon avalanche photodetectors",
JOURNAL=PJ,
VOLUME=16,
NUMBER=3,
NUMPAGES=11,
PAGES=6801711,
MONTH=JUN,
YEAR=2024}


*** Polysilicon

@ARTICLE{1997Laghla_TSF,
AUTHOR="Y. Laghla and E. Scheid",
TITLE="Optical study of undoped, {B} or {P}-doped polysilicon",
JOURNAL=TSF,
VOLUME=306,
PAGES={67--73},
YEAR=1997}

@ARTICLE{1998Asinovsky_TSF,
AUTHOR="L. Asinovsky and M. Schroth and F. Shen and J. J. Sweeney",
TITLE="Characterization and metrology of the diffusion doped polysilicon using ellipsometry",
JOURNAL=TSF,
VOLUME={313--314},
PAGES={248--253},
YEAR=1998}

@ARTICLE{1998Borghesi_TSF,
AUTHOR="A. Borghesi and G. Tallarida and G. Amore and F. Cazzaniga and G. Queirolo and M. Alessandri and A. Sassella",
TITLE="Influence of roughness and grain dimension on the optical functions of polycrystalline silicon films",
JOURNAL=TSF,
VOLUME={313--314},
PAGES={243--247},
YEAR=1998}

@ARTICLE{2000Cerqueira_TSF,
AUTHOR="M. F. Cerqueira and J. A. Ferreira and G. J. Adriaenssens",
TITLE="Structural studies and influence of the structure on the electrical and optical properties of microcrystalline silicon thin films produced by {RF} sputtering",
JOURNAL=TSF,
VOLUME=370,
PAGES={128--136},
YEAR=2000}

@ARTICLE{2000Gruska_TSF,
AUTHOR="B. Gruska",
TITLE="Ellipsometric analysis of polysilicon layers",
JOURNAL=TSF,
VOLUME=364,
PAGES={138--143},
YEAR=2000}

@ARTICLE{2000Tabet_TSF,
AUTHOR="M. F. Tabet and W. A. McGahan",
TITLE="Use of artificial neural networks to predict thickness and optical constants of thin films from reflectance data",
JOURNAL=TSF,
VOLUME=370,
PAGES={122--127},
YEAR=2000}


*** Silicides
