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High-frequency characterization of GaN buffer losses

Gioacchino Giffoni

High-frequency characterization of GaN buffer losses.

Rel. Fabrizio Bonani. Politecnico di Torino, Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict), 2022

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Unexpected Losses in GaN HEMTs have limited their performance at high frequencies, one of the most relevant are the unwanted hysteresis when we charge and discharge the output capacitance that can lead at large power losses, decreasing the efficiency of the device. This phenomenon is still unclear but the most accredited hypothesis concerns defects in the GaN Buffer that trap the high-energy electrons, causing an instability of charges during one cycle and so generating the hysteresis. The most used technique for the evaluation of Output Capacitance Losses is the Sawyer-Tower method, but its limitations due to the reference series capacitor connection and temperature dependace do not allow a complete understanding of the effect. For this reason a more sophisticated large signal method has been developed and verified for the identification and evaluation of the hysteresis losses for several voltages conditions. Finally this method was also able to perform on-wafer analysis so extending the characterization of this effect for GaN-on-Si chip showing some non linear effects.

Relators: Fabrizio Bonani
Academic year: 2022/23
Publication type: Electronic
Number of Pages: 90
Corso di laurea: Corso di laurea magistrale in Nanotechnologies For Icts (Nanotecnologie Per Le Ict)
Classe di laurea: New organization > Master science > LM-29 - ELECTRONIC ENGINEERING
Ente in cotutela: ecole polytechnique fédérale de lausanne (SVIZZERA)
Aziende collaboratrici: EPFL
URI: http://webthesis.biblio.polito.it/id/eprint/24780
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