In last decades the request for progressively larger dataset elaboration has pushed integrated system technology towards its limit. The development of novel technologies and computational paradigms came out to be necessary for overcoming miniaturization issues and fulfilling future applications requests. In this scenario, redox based resistive switching random access memory (ReRAM), based on memristive devices, has proven to be a promising candidate. Memristive devices encode information in the form of internal resistance variation (called resistive switching), caused by the formation and destruction of highly conductive filaments through a thin oxide layer. The fundamental processes underlying switching effect are redox reactions and ionic motion, driven by an electric field.