The efficiency of silicon-based optoelectronic devices has greatly improved due to the growing knowledge of the material, yet the increasing miniaturization and performance demand is pushing research towards fundamental physical limits. At nanometer scales, carrier mobility is degraded, recombination rates affect operation speed, and thermal management becomes a challenge. Low-dimensional semiconductors such as colloidal nanocrystal (NC) films and transition metal dichalcogenides (TMDs) are therefore investigated as promising candidates for next-generation optoelectronics. The objective of this thesis is to characterize the energy transport mechanisms in these nanomaterials and identify the factors that impact on their behavior. To simultaneously access electronic and thermal carriers with sub-micrometer spatial and nanosecond temporal resolution, we employ stroboscopic scattering microscopy (stroboSCAT).