This thesis project focuses on the electrical characterization of molybdenum (Mo)/silicon carbide (SiC) Schottky barriers for the development of high performance SiC-based power electronic devices. Silicon carbide is a group-IV compound semiconductor that exhibits such advantageous properties to make it a suitable candidate for high power applications. Indeed, it is characterized by a wide energy band gap: if the 4H-SiC polytype is considered, then the value of the band gap is almost three times the silicon one. High breakdown voltage, high carrier saturation velocity, small intrinsic carrier concentration and high thermal conductivity are among other SiC features that are worth mentioning.