Ludovica Asselta
Optimization of contact metallization for cryogenic High-electron-mobility transistors.
Rel. Matteo Cocuzza. Politecnico di Torino, Corso di laurea magistrale in Ingegneria Elettronica (Electronic Engineering), 2025
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Abstract
The development of high-performance quantum computers requires readout systems capable of energy-efficient amplification with minimal noise at cryogenic temperatures. Low-noise amplifiers (LNAs) based on InGaAs high-electron-mobility transistors (InGaAs HEMTs) are commonly employed to read low-power signals from a quantum processor, achieving a noise temperature of 2–4K and a DC power consumption of a few milliwatts. As future quantum computers scale up the number of qubits, the number of required LNAs may increase, potentially limiting power dissipation due to constrained cooling power. Optimizing Ohmic contact to reduce access resistance is crucial for minimizing signal loss, enhancing device efficiency, and reducing power dissipation at cryogenic temperatures.
This work investigates novel Ohmic contact configurations and analyzes their effects on the performance of state-of-the-art InGaAs HEMTs
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