Advanced Monte Carlo simulations of carrier transport in materials and devices for optoelectronics

The Monte Carlo method is among the best techniques for the simulation of electronic transport in mesoscopic semiconductor devices, thanks to the possibility of including a more detailed physical description compared to conventional approaches such as drift-diffusion. In the present work, advanced models of ionized impurity scattering, along with an algorithm to include the Pauli exclusion principle, have been investigated and implemented in a Monte Carlo code in order to treat high doping densities and degeneracy, that are especially important in the description of optoelectronic devices. Furthermore, a model to include a full-band description of the electronic dispersion relation is analyzed, since it is crucial in dealing with high energy transport. The new models have been applied here to two relevant problems, i.e., the estimation of the electron mobility of the InAsSb alloy as a function of temperature, doping and molar fraction, and the simulation of a novel high-speed germanium photodetector for silicon photonics.