Laser annealing on wafer

The integrated circuit (IC) was little known before the 1960s. However, today in 2020, it is said that the integrated circuit is the product of civilization with the fastest progress in human science and technology in this century. Before the invention of the integrated circuit,human beings lived in an era of information scarcity. After the invention of the integrated circuit, people lived in an age of information explosion. Moore's Law [1]points out that the line width of the circuit within the IC is rapidly narrowing, and the difference in thickness is only 1/10 of the line width. This design specification makes the line width of the IC circuit smaller, and it is difficult to distinguish between the current signal and the current noise accurately. As there are more and more transistors and the size is getting smaller, the difficulty of the manufacturing process of the transistors is significantly increased. With the continuous reduction of the feature size of integrated circuits and the constant increase of the number of transistors, large-size wafers have put forward further requirements for annealing methods. The energy-saving is leading new design paradigms and processing steps to the fabrication of discrete power devices. Main activities minimize the bulk material where most of the energy is dissipated during switching time. The thesis will focus on studyinga post-implantation process; in particular, a particular laser source will be designed, and a scanner system will be implemented to exploit the laser annealing process in two different wavelengths.